Growth and Characterization of 420 kg Bulk Multicrystalline Silicon (mc-Si) Ingot Grown by Directional Solidification Process for Photovoltaic Application

Da Wei Luo

doi:10.4028/www.scientific.net/AMR.873.592

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873Growth and Characterization of 420 kg Bulk...

Growth and Characterization of 420 kg Bulk Multicrystalline Silicon (mc-Si) Ingot Grown by Directional Solidification Process for Photovoltaic Application

Abstract:

Cast mc-Si ingots are widely used in photovoltaic manufacturing. The utilization rate of industrial polycrystalline silicon ingot only about 70%, most of them are less than 70%, the main influence factors are casting process, raw and auxiliary materials as well as the crucible material. The growth process and the overall characteristics of 420 kg polycrystalline silicon ingot are analyzed and researched in detail. This paper focuses on the distribution characteristics and causes of the casting defect which are analyzed in detail and discussed, at the same time suggestions are given to improve the utilization rate of the ingot.

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Periodical:

Advanced Materials Research (Volume 873)

Pages:

592-597

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.592

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Online since:

December 2013

Authors:

Da Wei Luo*

Keywords:

Directional Solidification, Multicrystalline Silicon, Photovoltaic (PV), Solar Cell

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