Direct Current Heating Model for the Siemens Reactor

Abstract:

The modified Siemens process is the primary technology of polycrystalline production at present. The Siemens reactor, which is the main equipment in the modified Siemens process, consists of a chamber where several high purity silicon slim rods are heated by an electric current flowing through them. The temperature on the rod centre must be under melting temperature of silicon (1687K) in order to avoid its breaking-down because of an uneven temperature profile of the silicon rod. Therefore the temperature profile of the silicon rod heated by direct current (DC) has been investigated by molding. The current density profile of silicon rod has also been studied to investigate the interaction of current density and temperature. The results show that the temperature is not homogeneous in the rod and the temperature in the center of the polysilicon rod is 1750K which is much higher than the melting temperature (1687K) when the temperature is 1423K on the surface of polysilicon and the radius of rod is 5cm. Therefore, the maximum growth radius of the polysilicon rod in Siemens reactor should be less than 5cm when the joule heating generated by DC. The current density increases from the center to the surface of the polysilicon rod.

• Periodical: Advanced Materials Research (Volumes 881-883)
• Pages: 1805-1808
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.881-883.1805
• Online since: January 2014
• Authors: Yan Qing Hou*, Gang Xie, Zhi Feng Nie, Nan Li
• Keywords: Current Density, Polysilicon, Temperature Profile

References

[1] Y. Q. Hou, G. Xie, D. P. Tao et. al: Material Review. Vol. 24 (2010), pp.31-34.

[2] Y. Q. Hou, G. Xie, D. P. Tao, X. H. Yu, R. X. Li and D. M. Song: Journal of Chemical Engineering of Japan. Vol. 44 (2011), pp.214-223.

[3] R. B. Bird, W. E. Steward and E. N. Lightfoot: Transport Phenomena, second ed. (John Wiley & Sons, Inc., New York 2002).

[4] Y. Q. Hou, G. Xie, P. A. Ramachandran et al. Transport-Kinetics Model for Siemens Reactor, Submitted to Chemical Engineering Journal (2013).

[5] S. E. Rea: Journal of Crystal Growth. Vol. 54 (1982), P. 267.

[6] C. Yaws, L. R. Lutwack , L. L. Dickens and G. Hsu: Solid State Technology. Vol. 24(1981), P. 87.

[7] Yu-Bo Yang. Transport-Kinetic effects in Manufacture of Polycrystalline Silicon, (Doctor thesis, Missouri, 1988).