Research of Complex PZT Film Base on Shear Mode Energy Harvesting

Abstract:

The preparation of complex PZT with high d₃₁ piezoelectric performance, which is used to the energy harvesting cantilever in vibration mode, is discussed in this paper. The Si/SiO₂/Cr/Au/PT/PZT/PT structure base on (100) silicon crystallographic is growth through a PT transition layer before coating Sol-gel PZT film, which is in favor of the PZT film polarization processing in d₃₁ shear mode. It is shown that the PZT film present the perovskite phase after optimize annealing at 700°C by XRD analysis. Piezoelectric properties test indicated that the PZT film has the coercive field at 23kV/cm and the remnant polarization is 60μC/cm². The silicon-based cantilever with complex PZT film fabricated by MEMS technology is also given in the paper.

• Periodical: Advanced Materials Research (Volumes 884-885)
• Pages: 363-369
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.884-885.363
• Online since: January 2014
• Authors: Xiao Jie Chen, Cheng Jun Qiu*, Hong Mei Liu, Yan Wei Dou, Shan Shan Cao
• Keywords: d₃₁ Mode, Energy Harvesting, PZT Complex Film, Sol-Gel

References

[1] S.P. Beeby, M.J. Tudor, N.M. White, in: Energy harvesting vibration sources for microsystems applications, Meas. Sci. Technol. 17 (2006).

DOI: 10.1088/0957-0233/17/12/r01

[2] S. Roundy, P.K. Wright, J. Rabaey, in: A study of low-level vibrations as a power source for wireless sensor nodes, Comput. Commun. 26(2003), p.1131–1144.

DOI: 10.1016/s0140-3664(02)00248-7

[3] Ottman G K, et al, in: Adaptive piezoelectric energy harvesting circuit for wireless remote power supply, [J] . IEEE Trans. On Power Electron, vol. 17(2002),: pp.669-676.

DOI: 10.1109/tpel.2002.802194

[4] R. Amarasinghe, D.V. Dao, T. Toriyama, and S. Sugiyama, in: Development of miniaturized 6-axis accelerometer utilizing piezoresistive sensing elements, Sens. Actuators A, Phys., vol. 134( 2007). p.310–320.

DOI: 10.1016/j.sna.2006.05.044

[5] P.T. Dong, X.X. Li, H. Yang, H.F. Bao, W. Zhou, S.Y. Li, and S.L. Feng, in: High-performance monolithic triaxial piezoresistive shock accelerometers, Sens. Actuators A, Phys., vol. 141 (2008), p.339–346.

DOI: 10.1016/j.sna.2007.10.032

[6] E. J. Eklund and A.M. Shkel, in: Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range, J. Micromech. Microeng, vol. 17 (2007), p.730–736.

DOI: 10.1088/0960-1317/17/4/009

[7] Y.C. Shu, I.C. Lien, in: Efficiency of energy conversion for a piezoelectric power harvesting systems, J. Micromech. Microeng. vol. 16 (2006), pp.2429-2438.

DOI: 10.1088/0960-1317/16/11/026

[8] Park C S, Lee S M, Kim H E. in: Effects of excess PbO and Zr/Ti ratio on microstructure and electrical properties of PZT films, [J]. Journal of the American Ceramic Society, vol. 91 (2008 ), pp.2923-2927.

DOI: 10.1111/j.1551-2916.2008.02567.x

[9] Wu J G, Zhu J L, Xiao D Q, et al. in: Preparation and properties of highly (100)-Oriented Pb (Zr0·2Ti0·8) O3 thin film prepared by RF magnetron sputtering with a PbOx buffer layer, [J]. Journal of Applied Physics, vol. 101(2007), pp.094-107.

DOI: 10.1063/1.2723190

[10] Yu Y H, Lai M O, Lu L, et al. in: Measurement of residual stress of PZT thin film on Si (100) by synchrotron X-Ray rocking curve technique, [J]. Journal of Alloys and Compounds, vol. 449(2008), pp.56-59.

DOI: 10.1016/j.jallcom.2006.02.109

[11] Shim D, Pak J, Nam K, et al. in: Enhanced fatigue characteristics of sol-Gel derived PZT thin films, [J]. Journal of Alloys and Compounds, vol. 449 (2008), pp.32-35.

DOI: 10.1016/j.jallcom.2006.02.088

[12] Duan Z X, Yuan J, Zhao Q L, et al. in: Preparation and ferroelectric properties of double-scale PZT composite piezoelectric thick film, [J]. Chinese Physics Letters, vol. 25 (2008), pp.1472-1475.

DOI: 10.1088/0256-307x/25/4/083

[13] Suarez-Gomez A, Sato-Berru R, Toscano R A, et al, in: On the synthesis and crystallization process of nanocrystalline PZT powders obtained by a hybrid sol-gel alkoxides route, [J]. Journal of Alloys and Compounds, vol. 450 (2008), pp.380-386.

DOI: 10.1016/j.jallcom.2006.10.143

[14] Zhang S Q, Fei W D, Li W L, et al. in: Ferroelectric properties of highly (111)-oriented Pb (Zr1-X, Tix) O3 thin films with different Zr/Ti ratios, [J]. Journal of Alloys and Compounds, vol. 487 (2009), pp.703-707.

DOI: 10.1016/j.jallcom.2009.08.049

[15] Lee S G in: Preparation and electrical properties of sol infiltrated Pb (Zr0·7Ti0·3) O3ferroelectric thick films, [J]. Journal of Alloys and Compounds, vol. 454 (2008): pp.406-409.

DOI: 10.1016/j.jallcom.2006.12.115

[16] Lee S G, Young J S, Jin K C, et al. in: Structural and dielectric properties of Pb (Zr, Ti) O3 heterolayered thick films, [J]. Journal of Alloys and Compounds, vol. 449(2008), pp.73-76.

DOI: 10.1016/j.jallcom.2006.01.115

[17] Karan N K, Thomas R, Pavunny S P, et al. in: Preferential grain growth and improved fatigue endurance in Srsubstituted PZT thin films on Pt (111) /TiOx/SiO2/Si substrates, [J]. Journal of Alloys and Compounds, 482 (2009), pp.253-255.

DOI: 10.1016/j.jallcom.2009.03.170

[18] Kwondw, Gabrielar, in: A2-μm BiCMOS rectifier-free AC-DC piezoelectric energy IC, [J]. IEEE harvester-charger Transactions on Biomedical Circuits and Systems, vol. 4(2010), pp.400-409.

DOI: 10.1109/tbcas.2010.2077288

[19] Shen Hui, QIU Jin-hao, JI Hong-li, et al, in: A lowpower circuit for piezoelectric bibration control by synchronized switching on voltage sources, [J]. Sensors and Actuators A, 2010(161): pp.245-255.

DOI: 10.1016/j.sna.2010.04.012

[20] Marzencki M, Ammar Y and Bastour S, in: Integrated power harvesting system including a MEMS generator and a power management circuit, [C]. Proc. Int. Conf. on Solid-State Sensors, Actuators and Microsystems (Lyon, France), 2007: pp.363-370.

DOI: 10.1109/sensor.2007.4300273