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Thermal Stability of Ultralow k Carbon-Bridged Periodic Mesoporous Organosilica Film

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Abstract:

Periodic mesoporous organosilica film was prepared via sol-gel and spin-coating methods using a 1, 2-bis (triethoxysilyl) ethane (BTEE) and a poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) triblock copolymer template (P123). Thermal treatment at 350°C for 1h resulted in the formation of ultralow dielectric constant (k) film with a k value of 1.82, a leakage current density of 1.58×10-9 A/cm2 at 0.5MV/cm, Youngs modulus of 6.45 GPa, and hardness of 0.58 GPa. Further, thermal treatment at higher temperature up to 500°C still achieves an ultralow k value smaller than 2.0, similar leakage current characteristics, and enhanced mechanical properties. These indicate that synthesized PMO film has robust thermal stability, and very good potential for the application of next-generation inter-level dielectrics.

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Periodical:

Advanced Materials Research (Volumes 887-888)

Pages:

757-761

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.887-888.757

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Online since:

February 2014

Authors:

Tao Jiang*, Shi Jin Ding, Zhong Yong Fan, Wei Zhang

Keywords:

High Thermal Stability, Interconnects, Periodic Mesoporous Film, Ultra-Low Dielectric Constant

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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