Structural and Optical Properties of Nickel-Doped and Undoped Zinc Oxide Thin Films Deposited by Sol-Gel Method

Siti Hajar Basri; Mohd Arif Mohd Sarjidan; Wan Haliza A. Majid

doi:10.4028/www.scientific.net/AMR.895.250

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 895Structural and Optical Properties of Nickel-Doped...

Structural and Optical Properties of Nickel-Doped and Undoped Zinc Oxide Thin Films Deposited by Sol-Gel Method

Abstract:

ZnO thin films with and without Ni-doping were successfully deposited by sol-gel method with zinc acetate dihydrate as inorganic precursor, and nickel (II) acetate tetrahydrate as dopant. The solutions were prepared by dissolving zinc acetate and nickel (II) acetate in ethanol and diethanolamine (DEA) as its chelating agent. Thin films were fabricated by using spin-coating method on glass substrates. ZnO films were obtained by pre-heating and post-heating at 300 °C for 10 minutes and 500 °C for 1 h respectively. The films were analyzed by X-ray diffraction (XRD), UV-Vis transmittance and photoluminescence (PL). All samples exhibit high transparency in visible. Ni dopant does not alter so much ZnO structure, which due to the ion substitution between Ni and Zn. However, the Ni tends to create a dopant energy interlayer in ZnO energy band gap which cause significant change in PL intensity.

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Advanced Materials Research (Volume 895)

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250-253

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https://doi.org/10.4028/www.scientific.net/AMR.895.250

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Online since:

February 2014

Authors:

Siti Hajar Basri, Mohd Arif Mohd Sarjidan, Wan Haliza A. Majid

Keywords:

Optical Property, Sol-Gel, Thin Film, X-Ray Diffraction (XRD), Zinc Oxide (ZnO)

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References

[1] Minami, T., H. Nanto, and S. Takata, Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic field. Applied Physics Letters, 1982. 41(10): pp.958-960.

DOI: 10.1063/1.93355

Google Scholar

[2] Service, R., Materials Science: Will UV Lasers Beat the Blues? Science, 1997. 276(5314): pp.895-895.

DOI: 10.1126/science.276.5314.895

Google Scholar

[3] Jeong, S., et al., Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties. Thin Solid Films, 2003. 435(1): pp.78-82.

DOI: 10.1016/s0040-6090(03)00376-6

Google Scholar

[4] Makino, T., et al., Room-temperature luminescence of excitons in ZnO/(Mg, Zn) O multiple quantum wells on lattice-matched substrates. Applied Physics Letters, 2000. 77(7): pp.975-977.

DOI: 10.1063/1.1289066

Google Scholar

[5] Lee, J.B., S.H. Kwak, and H.J. Kim, Effects of surface roughness of substrates on the< i> c</i>-axis preferred orientation of ZnO films deposited by rf magnetron sputtering. Thin Solid Films, 2003. 423(2): pp.262-266.

DOI: 10.1016/s0040-6090(02)00977-x

Google Scholar

[6] Gorla, C., et al., Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011 2) sapphire by metalorganic chemical vapor deposition. Journal of Applied Physics, 1999. 85(5): pp.2595-2602.

DOI: 10.1063/1.369577

Google Scholar

[7] Yamada, A., B. Sang, and M. Konagai, Atomic layer deposition of ZnO transparent conducting oxides. Applied Surface Science, 1997. 112: pp.216-222.

DOI: 10.1016/s0169-4332(96)01022-7

Google Scholar

[8] Alam, M. and D. Cameron, Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol–gel process. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001. 19(4): pp.1642-1646.

DOI: 10.1116/1.1340659

Google Scholar

[9] Fouad, O., et al., Zinc oxide thin films prepared by thermal evaporation deposition and its photocatalytic activity. Applied Catalysis B: Environmental, 2006. 62(1): pp.144-149.

DOI: 10.1016/j.apcatb.2005.07.006

Google Scholar

[10] Cheng, H.C., C.F. Chen, and C.Y. Tsay, Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method. Applied Physics Letters, 2007. 90(1): pp.012113-3.

DOI: 10.1063/1.2404590

Google Scholar

[11] Nunes, P., et al., Effect of different dopant elements on the properties of ZnO thin films. Vacuum, 2002. 64(3): pp.281-285.

DOI: 10.1016/s0042-207x(01)00322-0

Google Scholar

[12] Majumder, S., et al., Investigations on solution derived aluminium doped zinc oxide thin films. Materials Science and Engineering: B, 2003. 103(1): pp.16-25.

DOI: 10.1016/s0921-5107(03)00128-4

Google Scholar

[13] Kim, K. -T., et al., Characteristics of Nickel-doped Zinc Oxide thin films prepared by sol–gel method. Surface and Coatings Technology, 2008. 202(22–23): pp.5650-5653.

DOI: 10.1016/j.surfcoat.2008.06.078

Google Scholar