Anode Buffer for Organic Devices Composed of Gold Nanoparticles Prepared by Ark Plasma Deposition

Dan Wang; Noriaki Yukitake; Katsuhiko Fujita

doi:10.4028/www.scientific.net/AMR.896.451

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Anode Buffer for Organic Devices Composed of Gold Nanoparticles Prepared by Ark Plasma Deposition
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 896Anode Buffer for Organic Devices Composed of Gold...

Anode Buffer for Organic Devices Composed of Gold Nanoparticles Prepared by Ark Plasma Deposition

Abstract:

Gold nanoparticles (Au NPs) with mean size of 1 nm were placed on an indium tin oxide (ITO) electrode by ark plasma gun. The hole injection at ITO/organic semiconductor was significantly enhanced by the NPs. Though the hole current was unstable upon the voltage scan, it can be substantially stabilized by the insertion of hyper-branched polystyrene (HPS) thin layer between ITO and Au NPs. The work function of ITO electrode was also increased by NPs. The ITO/HPS/Au NPs structure was applied to the anode of an organic solar cell (OSC) with a bulk heterojunction active layer. The power conversion efficiency was significantly higher than that of OSC without anode buffer layer and almost comparable to that with a representative buffer material.

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Periodical:

Advanced Materials Research (Volume 896)

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451-454

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.896.451

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Online since:

February 2014

Authors:

Dan Wang, Noriaki Yukitake, Katsuhiko Fujita*

Keywords:

Anode Buffer, Ark Plasma Gun, Hole Injection, Organic Electronics, Organic Solar Cell (OSC)

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* - Corresponding Author

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