Application of Finite Difference Method in Modeling Quantum Dot Superlattice Silicon Tandem Solar Cell

Abstract:

In this paper we propose an effective method to model quantum dot superlattice silicon tandem solar cell. The Schrödinger equation is solved through finite difference method (FDM) to calculate energy band of three-dimensional silicon quantum dots embedded in the matrix of SiO₂ and Si₃N₄.We simulate the quantum dot superlattice as regularly spaced array of equally sized cubic dots in respective matrix. For simplicity, we consider only one period of the structure in calculation. From the result, the effects of matrix material, dot size and inter-dot distance on the bandgap are obtained.

• Periodical: Advanced Materials Research (Volume 898)
• Pages: 249-252
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.898.249
• Online since: February 2014
• Authors: Jie Huang*, Jian Liang Jiang, Abdelkader Sabeur
• Keywords: Finite Difference Method, Quantum Dot Matrix, Silicon Tandem Solar Cell

References

[1] E.C. Cho, M. A. Green, and G. Conibeer: Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells, Advances in Optoelectronics, Vol. 2007, Article ID 69578, p.11.

DOI: 10.1155/2007/69578

[2] B.M. Stupovski, J.V. Crnjanski, and D.M. Gvozdi´c: Application of coordinate transformation and finite differences method innumerical modeling of quantum dash band structure, Computer Physics Communications, Vol. 2011, no. 182, p.289.

DOI: 10.1016/j.cpc.2010.09.014

[3] G. Conibeer , M.A. Green, and E.C. Cho: Silicon quantum dot nanostructures for tandem photovoltaic cells, Thin Solid Films, vol. 2008, no. 516, p.6748.

DOI: 10.1016/j.tsf.2007.12.096

[4] G. Conibeer, M.A. Green, and R. Corkish: Silicon nanostructures for third generation photovoltaic solar cells, Thin Solid Films, vol. 2006, no. 511, p.654.

DOI: 10.1016/j.tsf.2005.12.119

[5] D. Munteanu , J.L. Autran: Modeling of energy bands in ultra-thin layer quantum nanostructures forsolar cell applications, Journal of Non-Crystalline Solids, volume 357, issues 8, p.1835.

DOI: 10.1016/j.jnoncrysol.2010.11.112

[6] O.L. Lazarenkova and A. A. Balandin: Electron and phonon energy spectra in a three-dimensional regimented quantum dot superlattice, PHYSICAL REVIEW B, vol. 66, no. 245319, p.652.

DOI: 10.1103/physrevb.66.245319

[7] C.W. Jiang and M.A. Green: Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications, Journal of Applied Physics, vo. 99, issue 11, p.4902.

DOI: 10.1063/1.2203394

[8] Y.C. Yeo,Q. Lu, and W. C. Lee: Direct Tunneling Gate Leakage Current in Transistorswith Ultrathin Silicon Nitride Gate Dielectric, IEEE Electron Device Letters, vol. 21, issue 11, p.540.

DOI: 10.1109/55.877204

[9] J.J. Liu, L.X. Zhai: Using the Finite Difference Method to Solve the Energy Eigenvalue Equation, Journal of Beijing Institute of Technology, vol. 34, no. 3, p.325 (in Chinese).