Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

Jun Gou; Hui Ling Tai; Jun Wang; De En Gu; Xiong Bang Wei; Ya Dong Jiang

doi:10.4028/www.scientific.net/AMR.909.91

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 909Study on Reactive Ion Etching of Vanadium Oxide...

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

Abstract:

A high selectivity patterning technology of vanadium oxide (VO_x) thin film was suggested in this paper. VO_x thin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VO_x etch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N₂. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VO_x etch rate of 74 nm/min, a PR selectivity of 0.96, a Si₃N₄ selectivity of 5 and a SiO₂ selectivity of 10.

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Advanced Materials Research (Volume 909)

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91-94

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https://doi.org/10.4028/www.scientific.net/AMR.909.91

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March 2014

Authors:

Jun Gou*, Hui Ling Tai, Jun Wang, De En Gu, Xiong Bang Wei, Ya Dong Jiang

Keywords:

RIE, Taguchi Method, VO_x Thin Film

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