Effects of Nitrogen Doping on Nanocrystalline Diamond/p-Type Si toward Solar Cell Applications

Chii Ruey Lin; Da Hua Wei; Minh Khoa Bendao

doi:10.4028/www.scientific.net/AMR.918.59

Paper Titles

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Optical Properties of Black Silicon Using the Combination Method of KOH and Gold-Assisted HF Etching
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Formula Design of Corrosion-Resistant Concrete under Sulfate-Chloride Compound Attack
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Development and Application of Nanotechnology in Sports
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Effects of Nitrogen Doping on Nanocrystalline Diamond/p-Type Si toward Solar Cell Applications
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Support Vehicles Allocation Method Set Based on Feature
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Applying of Piston Mechanism Design Used in the Wavelength Electrical Generating of Ocean for Fishing Communities
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Design of Self-Alignment Devices with Fluidic Self-Assembly for Flip Chip Packages in Batch Processing
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Application Topsis Analysis on Aviation Anti-Submarine Aircraft Performance Evaluation
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 918Effects of Nitrogen Doping on Nanocrystalline...

Effects of Nitrogen Doping on Nanocrystalline Diamond/p-Type Si toward Solar Cell Applications

Abstract:

In this work, a solar cell structure of nitrogen-doped nanocrystalline diamond (NCD:N)/p-type silicon was fabricated using microwave plasma jet chemical vapour deposition technique. The effects of nitrogen doping level on the structure, optical, and electrical of the as-grown NCD:N was discussed. The results showed that the micro structure, surface roughness, electrical properties, and optical properties were affected by the nitrogen doping. Additionally, the agglomeration of the film was increased with the higher concentration of CN species when the ratio of doped nitrogen increased. The roughness of the film was Rms:16.5 nm ~ 20.4 nm and the wettability was increased (contact angle 94.4^o ~ 64.6^o). The optical transmittance was decreased (87% ~ 72%) with the higher nitrogen. The results of Hall measurements showed that the carrier concentration increased 2 order (1016 cm^-3 to 1018 cm^-3) through nitrogen doping. The solar cell was made by NCD: N compound with p-type silicon. The photoelectric conversion efficiency was 2.8%. The open-circuit voltage was 0.52 V. The short-circuit current was 3 mA and the fill factor was 0.38.