Optical Properties of Black Silicon Using the Combination Method of KOH and Gold-Assisted HF Etching

Article Preview

Abstract:

A kind of hill-like black silicon have been designed and fabricated by using the combination method of KOH anisotropic etching and gold-assisted HF etching. Pillars array on the surface of a silicon sample was obtained by KOH etching with a SiNx film dots pattern used as a mask. The sample was then etched in the oxidant HF solution catalyzed by Au nanoparticles for 5 minutes. The etched sample appears dark black. This black silicon is orderly hill-like textures in micro-scale with density nanopores on them. It can suppress the reflection to less than 4% in wavelength range from 250nm to 1000nm, and to about 2.5% at the wave number of 2000-4000 cm-1. It also has high additional absorption in IR range.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

42-46

Citation:

Online since:

April 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] R. B. Stephens, G. D. Cody, Thin Solid Films. Vol. 45 (1977), p.19.

Google Scholar

[2] B. G. Prevo, E. W. Hon, O. D. Velev, J Mater Chem. Vol. 17 (2007), p.791.

Google Scholar

[3] J. Yoo, G. Yu, J. Yi, Materials Science and Engineering: B. Vol. 159 (2009), p.333.

Google Scholar

[4] S. Koynov, M. S. Brandt, M. Stutzmann, Appl Phys Lett. Vol. 88 (2006), p.203107.

Google Scholar

[5] D. G. Stavenga, S. Foletti, G. Palasantzas, K. Arikawa, Proc R Soc B. Vol. 273 (2006), p.661.

Google Scholar

[6] P. Lalanne, G. M. Morris, Nanotechnology. Vol. 8 (1997), p.53.

Google Scholar

[7] A.Y. Vorobyev, Chunlei Guo, Applied Surface Science. Vol. 257 (2011), p.7291.

Google Scholar

[8] S. Koynov, M. S. Brandt, M. Stutzmann, Appl Phys Lett. Vol. 88 (2006), p.203107.

Google Scholar

[9] Y. Matsui, S. Adachi. ECS J. Solid State Sci. Technol. Vol. 3(4) (2014), p.48.

Google Scholar

[10] X. Li and P.W. Bohn, Appl Phys Lett. Vol. 77 (2000), p.2572.

Google Scholar

[11] H. Seidel, L. Csepregi, A. Heubergerl, J Electrochem Soc. Vol. 137(11) (1990), p.3612.

Google Scholar

[12] Y. R. Lin, H. P. Wang, C. A. Lin, J Appl Phys. Vol. 106 (2009), p.114310.

Google Scholar