Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

Abstract:

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field H_k decreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

• Periodical: Advanced Materials Research (Volume 924)
• Pages: 141-151
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.924.141
• Online since: April 2014
• Authors: Yu Rong An, Yue Li, Zhen Wang, Ya Lu Zuo, Li Xi*
• Keywords: High Frequency Property, Magnetic Thin Films, Spin Reorientation Transition

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