Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO₂ Thin Films by Sol-Gel Method

Abstract:

The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. The sample was annealed in air ambient at different annealing temperature and duration of 250 and 450 °C for 20 and 60 min. The effect of post-annealing process to the physical thickness and crystallinity of the films towards switching behaviour was studied. It was found that the thickness and crystallinity of the films increases as the post annealing process increases. Sample annealed at 250 °C for 20 min with thinner film showed better switching behaviour even though the sample is still in amorphous form. Thus, in our work, we believed that the crystallinity of the films does not affect the switching behaviour of the sample. The reliability of device performance was studied by repeating the measurement for three times.

• Periodical: Advanced Materials Research (Volume 925)
• Pages: 125-129
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.925.125
• Online since: April 2014
• Authors: Nur Syahirah Kamarozaman*, Mohd Firdaus Mohamed Soder, Mohamed Zahidi Musa, Raudah A. Bakar, Wan Fazlida Hanim Abdullah, Sukreen Hana Herman, Mohamad Rusop Mahmood
• Keywords: Memristive Behavior, Post-Annealing Process, Resistive Switching, Spin-Coating Method, TiO₂ Thin Film

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