Fabrication of Poly-Si Nanowire Using Conventional Photolithography Technique

Abstract:

A simple method for the fabrication of polycrystalline silicon (poly-si) nanowires using conventional photolithography combined with thermal oxidation-size reduction method is presented. In our process, a polysilicon layer is deposited by low pressure chemical vapour deposition technique on SiO₂ layer. Conventional photolithograpy is used to define the initial poly-si of dimensions 1 um. In order to miniaturize microwire to nanowire, size reduction method is employed using several time of dry thermal oxidation process. The characterization that is applied to measure the profile of poly-si nanowires using optical microscopy.

• Periodical: Advanced Materials Research (Volume 925)
• Pages: 460-463
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.925.460
• Online since: April 2014
• Authors: Mohammad Nuzaihan*, Uda Hashim, Taib Nazwa, A. Rahim Ruslinda
• Keywords: Conventional Photolithography, Polycrystalline Silicon (Poly-Si), Silicon Nanowires

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