Characterizations of Nitrogen Doped Cupric Oxide Thin Films Deposited on Different Substrates for Solar Cell Applications

Abstract:

In this work, structural, optical and electrical properties of nitrogen doped (N-doped) cupric oxide (CuO) thin films deposited on <100> orientated n-type silicon, glass and polyethylene terephthalate substrates using reactive radio frequency sputtering system were investigated. X-ray diffraction results revealed that all films exhibited monoclinic CuO(-111) and have only slightly different structural properties for various substrates. Field effect scanning electron microscopy shown N-doped CuO on Si and glass are denser than on PET substrates and all have nanotriangle-like structure morphologies. The N-doped CuO thin films have an indirect band gap of around 1.30 eV. The resistively, carrier concentration and hall mobility of the N-doped CuO thin film on glass were 1.05 kΩ.cm, 6.70 x 10¹⁴ cm^-3 and 8.86 cm²/V-s respectively. Furthermore, palladium formed ohmic contact characteristics for N-doped CuO on glass and PET but exhibited schottky contact characteristics for N-doped CuO on Si.

• Periodical: Advanced Materials Research (Volume 925)
• Pages: 469-473
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.925.469
• Online since: April 2014
• Authors: Poh Kok Ooi*, Mohd Anas Ahmad, Sha Shiong Ng, Mat Johar Abdullah
• Keywords: CuO, Nitrogen Doped, Nitrous Oxide, Reactive Radio Frequency Sputtering

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