Performance of P3HT:PCBM Organic Solar Cell with ZnO Buffer Layer

M.S Alias; Sharul Ashikin Kamaruddin; Che Ani Norhidayah; Nurulnadia Sarip; Nafarizal Nayan; Sahdan Mohd Zainizan

doi:10.4028/www.scientific.net/AMR.925.580

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 925Performance of P3HT:PCBM Organic Solar Cell with...

Performance of P3HT:PCBM Organic Solar Cell with ZnO Buffer Layer

Abstract:

In this paper, we explore the characteristics of bulk heterojunction solar cell based on poly (3-hexyl thiophene) [P3HT] and [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] by introducing a buffer layer with device configuration of ITO/ZnO/P3HT:PCBM/Au. Nanostructured ZnO with individual diameter around 20-50 nm was used as the buffer layer and its effects on the short circuit current density, J_s_c and open circuit voltage, V_o_c were investigated. It was found that, the electrical characteristic of the organic solar cell was obviously changed by introducing the buffer layer. Solar cell characteristic with V_oc of 0.3939 V was obtained but the J_sc was very small. The surface topology of the P3HT:PCBM was investigated using an atomic force microscopy (AFM). ZnO nanoparticles were observed using a field emission scanning electron microscope (FESEM) and the electrical properties of the solar cell was measured using a solar simulator with a current – voltage (I-V) measurement system.

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Periodical:

Advanced Materials Research (Volume 925)

Pages:

580-584

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.925.580

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Online since:

April 2014

Authors:

M.S Alias*, Sharul Ashikin Kamaruddin, Che Ani Norhidayah, Nurulnadia Sarip, Nafarizal Nayan, Sahdan Mohd Zainizan

Keywords:

Buffer Layer, Bulk Heterojunction, Nanostructured ZnO, Organic Solar Cell

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