Characterization of MgxZn1-xO Films Grown by Electrochemical Deposition

Lei Guo

doi:10.4028/www.scientific.net/AMR.926-930.22

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 926-930Characterization of MgxZn1-xO Films Grown by...

Characterization of Mg_xZn_1-xO Films Grown by Electrochemical Deposition

Abstract:

Mg-doped ZnO thin films are successfully synthesized via an electro-deposition route, using urotropine as the complex agent. The XRD results show that Mg_xZn_1-xO films possess a wurtzite crystal structure and the (002) diffraction peak shifts to a high angle with Mg²⁺ concentration increasing, which indicate that a small quantity of Mg atoms is incorporated into the ZnO lattices. Raman scattering reveals that Mg-doping can eliminate the oxygen vacancies. The spectral position of the photoluminescence and optical band gap were successfully tuned from 3.3 to 3.72eV by adjusting the Mg content. Throughout this tuning range, the crystal quality was sufficiently preserved to maintain the excitonic nature of the material resulting in very efficient ultraviolet emission.

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Periodical:

Advanced Materials Research (Volumes 926-930)

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22-25

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.926-930.22

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Online since:

May 2014

Authors:

Lei Guo*

Keywords:

Electrodeposition, Mg_xZn_1-xO Thin Films, Photoluminescence (PL)

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