Effects of La-Dopant on Phase, Microstructure and Dielectric Properties of Bi4Ti3O12 Ceramics

Pasinee Siriprapa; Anucha Watcharapasorn; Sukanda Jiansirisomboon

doi:10.4028/www.scientific.net/AMR.93-94.251

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 93-94Effects of La-Dopant on Phase, Microstructure and...

Effects of La-Dopant on Phase, Microstructure and Dielectric Properties of Bi₄Ti₃O₁₂ Ceramics

Abstract:

Bi4-xLaxTi3O12 (where x = 0, 0.25, 0.50, 0.75 and 1) powders and ceramics were prepared using conventional solid state reaction and sintering procedures. The calcination was carried out at 750 °C for 4 h and sintering was done at 1150 °C for 4 h. The density of all ceramics was found to be comparable regardless of La concentration. X-ray diffraction analysis showed that preferred orientation of ceramic grains was reduced with addition of La ions. This reduced preferred orientation was accompanied by a decrease in grain size. The temperature dependence of dielectric constant showed a decrease in Tc with increasing La concentration.

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Advanced Materials Research (Volumes 93-94)

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251-254

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https://doi.org/10.4028/www.scientific.net/AMR.93-94.251

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January 2010

Authors:

Pasinee Siriprapa, Anucha Watcharapasorn, Sukanda Jiansirisomboon

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BLT, Dielectric Property, Layered Compound, Microstructure, X-Ray Diffraction (XRD)

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