A New Mismatch Model of Temperature and Narrow Channel Width Dependence on Threshold Voltage of MOSFETs

Anucha Ruangphanit; Natthaphon Sakuna; Surasak Niemcharoen; Rangson Muanghlua

doi:10.4028/www.scientific.net/AMR.931-932.984

Paper Titles

The Flashover Phenomena due to Water Drops on Insulating Surface under DC Electric Field
p.962

Study on Partial Discharge with Water Droplets on the Circular Epoxy Resin Insulator under AC Electric Field Stress
p.968

Design of Multilayer Polarization Beam Splitters Using Multiobjective Evolutionary and Genetic Algorithms
p.973

The Effect of Deterioration on Insulating Surface due to Flashover under AC Electric Field Stressed by Water Droplets
p.979

A New Mismatch Model of Temperature and Narrow Channel Width Dependence on Threshold Voltage of MOSFETs
p.984

Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling
p.989

Effect of Copper Wire Placement Speed Analysis on Actuator Arm by Finite Element
p.994

Localization in Wireless Sensor Networks: Solvability Improvement Technique Using Priori Information from Sensing Data and Network Properties in Unit Disk Graph Model
p.999

Biodiesel B10 – An Alternative Fuel for Diesel Pick-Up Trucks
p.1007

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 931-932A New Mismatch Model of Temperature and Narrow...

A New Mismatch Model of Temperature and Narrow Channel Width Dependence on Threshold Voltage of MOSFETs

Abstract:

A new mismatch model of temperature and narrow channel dependence on threshold voltage of MOSFETs and the parameter extraction method are proposed. A new model is developed from spice level3 and BSIM3 model. The I_DS -V_GS in linear region was used with a different of channel width. The threshold voltage parameters extraction procedure is based on the measurement of the tranconductance characteristics of MOSFET in linear region. In this predicted model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET at various narrow channel width of MOSFET are determined. The results show that the deviations of experimentally measured threshold voltages of both devices from the predicted model are around 3%.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 931-932)

Pages:

984-988

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.931-932.984

Citation:

Cite this paper

Online since:

May 2014

Authors:

Anucha Ruangphanit*, Natthaphon Sakuna, Surasak Niemcharoen, Rangson Muanghlua

Keywords:

BSIM3, MOSFET

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Forty. D, Mosfet Modelling with SPICE Principle and Practice, Prentice Hall, New Jersy, (1997).

Google Scholar

[2] Tsividis, Operation and Modelling of the MOS Transistor, McGraw-Hill, Singapore, (1988).

Google Scholar

[3] Cheng,Y. and Hu, MOSFET Modelling and BSIM3 User'sGuide, Kluwer publisher, USA, (1999).

Google Scholar

[4] Sze. S M, Phys of semiconductor devices, Wiley John & Sons, New York, (1991).

Google Scholar

[5] Deiter K. Schroder, Semiconductor Material and Device Characteristics, John Wiley & Son, New-York America, (1990).

Google Scholar

[6] Wang, R. DeMassa, T.A. and Jelsma, Threshold Voltage Variations with Temperature in MOS Transistor, IEEE Electron Device, 18, (1971) 386–388.

DOI: 10.1109/t-ed.1971.17207

Google Scholar

[7] Klaassen, On the Temperature Coefficient of the MOSFET Threshold Voltage, Solid-State Electronics, 29, (1986) 787-789.

DOI: 10.1016/0038-1101(86)90180-2

Google Scholar

[8] N. Phongphanchanthra, The reliability of threshold voltage over operating temperature in NMOSFETs devices, TISD2010, (2010).

Google Scholar

[9] A. Ruangphanit, R. Muanghlua , The Effects of Temperature and Device Dimension of MOSFETs on the DC Characteristics of CMOS Inverter, ECTI-CON 2012, (2012) 341-345.

DOI: 10.1109/ecticon.2012.6254337

Google Scholar

[10] A. Ruangphanit, The Effects of Temperature on the Threshold voltage and the Subthreshold Characteristics of NMOSFETs, KKU-IENC2012, (2012) 186-190.

Google Scholar

[11] A. Ruangphanit, Mismatch model of Operating Temperature and Channel width on Threshold Voltage of MOSFETs in VLSI, iEECON2012, (2012) 189-192.

Google Scholar

[12] Willey Maes , Lodc Lauwers, SIMPRA II A Parameter Extraction and model Evaluation Software Package, IMEC V.Z. W, Belgium, (1991).

Google Scholar