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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 938Plasma Enhanced Chemical Vapor Deposition Time...

Plasma Enhanced Chemical Vapor Deposition Time Effect on Multi-Wall Carbon Nanotube Growth Using C₂H₂ and H₂ as Precursors

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Abstract:

Multi-wall carbon nanotube (MWCNT) structures were grown on cobalt catalyst layer through Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Acetylene (C2H2) and hydrogen (H2) are used as precursors during the PECVD process. The morphology structures of the MWCNTs grown under different PECVD time were investigated and characterized using Scanning Electron Microscope (SEM). The effect of the PECVD time on the MWCNT growth is studied by varying the PECVD time at 45 sec and 600 sec. The morphology structures suggest that the growth rate is proportional to the PECVD time under the similar setting condition of pressure, acetylene flow-rate and temperature.

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Nanomaterials: Science, Technology and Applications

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Periodical:

Advanced Materials Research (Volume 938)

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58-62

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.938.58

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Online since:

June 2014

Authors:

Yusoff Noriah*, Nor Hayati Saad, Mohsen Nabipoor, Suraya Sulaiman, Daniel Bien Chia Sheng

Keywords:

Acetylene, Cobalt Catalyst, Hydrogen Plasma, MWCNT, Nanostructure Array

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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