Study on the Structural Properties of Polycrystalline Er2O3 Films on SI(001) Substrates by Raman Spectra

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Abstract:

The Raman spectra of polystalline Er2O3 films on Si (001) substrates annealed at different temperatures in O2 atmosphere were investigated. Seven Raman lines are identified in annealed Er2O3 films on Si (001) substrates. Two broad peaks larger than 600 cm-1 are detected, and their origination is discussed. Raman spectroscopy is proved to be a simple and sensitive method to characterize the structures of Er2O3 films on Si substrates.

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Advanced Materials Research (Volumes 953-954)

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1091-1094

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June 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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