Simulation of the Bombardment to the Intrinsic Thin Layer of a-Si:H by Plasmas in the Hit Solar Cell

De Zhi Hu; Jin Shun Wu; Tao Peng

doi:10.4028/www.scientific.net/AMR.953-954.87

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 953-954Simulation of the Bombardment to the Intrinsic...

Simulation of the Bombardment to the Intrinsic Thin Layer of a-Si:H by Plasmas in the Hit Solar Cell

Abstract:

In the paper, the discharge process of double frequency capacitive coupled Plasma in argon gas has been investigated by one dimensional PIC/MCC method. The result shows that the rf voltage in fluence the density and Potential deeply. Furthermore, the effect of various driven voltage on ion energy distribution (IED) and ion angle distribution (IAD) at the electrode is studied. It is found that when the driven voltage grows, the Peak of energy increases. At the same time, the high energy ions distribution increase clearly too. The content of bombardment to the intrinsic thin layer of a-Si:H is analyzed in the condition of various driven voltage. The critical driven voltage is calculated, which can keep the plasma discharge process and not erode the intrinsic thin layer in the HIT solar cell.