Thermal and Shear Characteristics Study of Various Mechanical Polishing Materials

Abstract:

Mechanical polishing is a primary technique for planarization of material surface in manufacture fabrication. Because the theoretical polishing mechanism is inadequately understood and because higher levels of polishing performance are desired, the investigation of experiment becomes more important. In this paper, a high precision polishing machine has established. With an improved design, a test rig can be easily used to simulate the mechanical polishing process and acquire the signals of polishing. The temperature-rise and shear force are measured for three different materials (i.e. copper, aluminum and silicon wafer) during mechanical polishing process. For the self-design test rig in the mechanical polishing process, its surface temperature is measured by T-type thermocouples screwed behind the polishing interface of the carrier. And shear force is measured by a load transducer mounted on the lever and connected with the polishing head. Furthermore, the roughness and particle size effects during polishing are demonstrated. The experimental results not only provide a good index to end-point-detection, but also increase the understanding of mechanical polishing process.

• Periodical: Advanced Materials Research (Volumes 97-101)
• Pages: 2076-2079
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.97-101.2076
• Online since: March 2010
• Authors: Hung Jung Tsai, Shun Jung Chiu, Hung Cheng Tsai, Pay Yau Huang
• Keywords: Mechanical Polishing, Roughness, Shear Force, Temperature Rise

References

[1] N. Taniguchi: Precis. Eng. Vol. 16 (1994), p.4.

[2] J. Khan: Thin Solid Film Vol. 220 (1992), p.222.

[3] L. M. Cook: Journal of Non-Crystal Solids Vol. 120 (1990), p.152.

[4] G. Nanz and L. E. Camilletti: IEEE Trans. Semiconductor Manufacturing Vol. 8 (1995), p.382.

[5] S. R. Runnels and L. M. Eyman: Journal of Electrochemical. Soc. Vol. 141 (1994), p.1698.

[6] S. Sundararajan, D. G. Thakurta, D. W. Schwendeman, S. P. Murarka and W. N. Gill: J. Electrochem. Soc. Vol. 146 (1999), p.761.

[7] H. J. Tsai, Y. R. Jeng and P. Y. Huang: Proc. IMechE Part J: J. Engineering Tribology Vol. 222 (2008), p.761.

[8] H. Liang, F. Kaufman, R. Sevilla and S. Aniur: Wear (1997), p.271.

[9] J. Lu, J. Coppeta, C. Rogers, L. Racz, A. Philipossian, M. Moinpour and F. Kaufman: Mater. Res. Soc. Symp. Proc. Vol. 613 (2000), p. E1. 2. 1.

[10] D. J. Stein and D. L. Hetherington, Proc. SPIE, Vol. 4406 (2001), p.157.

[11] H. Hocheng and Y. L. Huang, IEEE Trans. Semiconductor Manufacturing, Vol. 17 (2004), p.180.