Effect of Sintering Temperature on Dielectric Properties of CaCu₃Ti₄O₁₂ Ceramics Prepared by Mechanochemical Process

Abstract:

CaCu₃Ti₄O₁₂ (CCTO) is well known to have colossal dielectric constant in the range of 10⁵.It is widely accepted that this phenomenon may be attributed to internal layer barrier capacitance (IBLC) model. The dielectric properties of CCTO were reported to be strongly dependent on the processing conditions and grain size. In this work, CCTO samples with different grain sizes were produced by varying sintering temperature in order to investigate IBLC effect on dielectric properties of CCTO. The samples were sintered at four different temperatures, (T=1100°C, 1050°C, 1000°C and 950°C). Dielectric measurements were carried out for the samples in the frequency range of 10² – 10⁶Hz using impedance spectrometer. Electron micrographs showed that increasing temperature promoted the grain growth of CCTO while sintering. The internal crystalline defects are seen to play major role by increasing the grain conductivity in dipole formation and increased the dielectric constant of the samples.

• Periodical: Advanced Materials Research (Volume 974)
• Pages: 157-161
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.974.157
• Online since: June 2014
• Authors: Masturah Mohamed*, Mahesh Talari, Mohd Salleh Mohd Deni, Azlan Zakaria
• Keywords: CCTO, Dielectric Property, Variation Sintering Temperatures

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