Simulation of Dirac Tunneling Current of an Armchair Graphene Nanoribbon-Based P-N Junction Using a Transfer Matrix Method

Abstract:

We have studied tunneling current in a p-n junction based on armchair graphene nanoribbon (AGNR) by using the relativistic Dirac equation and a transfer matrix method (TMM). The electron wave function was derived by solving the relativistic Dirac equation. The TMM, which is a numerical approach, was used to calculate electron transmittance and the tunneling current. The results showed that the tunneling current increases with the bias voltage. On the other hand, the tunneling current increases with the decreases in the electron incidence angle and temperature. Moreover, the increases in the AGNR width and electric field in the p-n junction result in the increase in the tunneling current.

• Periodical: Advanced Materials Research (Volume 974)
• Pages: 205-209
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.974.205
• Online since: June 2014
• Authors: Endi Suhendi*, Rifky Syariati, Fatimah A. Noor, Neny Kurniasih, Khairurrijal Khairurrijal
• Keywords: Dirac Tunneling Current, Graphene Nanoribbon, p-n Junction, Transfer Matrix Method

References

[1] D. Jena, T. Fang, Q. Zhang and H. Xing: Appl. Phys. Lett. Vol. 93 (2008), 112106.

[2] W. Yansen, M. Abdullah and Khairurrijal: Jurnal Nanosains & Nanoteknologi Vol. 3 (2010), p.18.

[3] E. Suhendi, R. Syariati, F.A. Noor, N. Kurniasih and Khairurrijal: submitted to American Institute of Physics (AIP) Conference Proceedings (2014).

[4] L. Brey and H.A. Fertig: Phys. Rev. B 73 (2006), 235411.

[5] Y.W. Son, M.L. Cohen and S.G. Loui:, Phys. Rev. Lett. 97 (2006), 216803.

[6] B. Huang, Q. Yan, G. Zhou, J. Wu, F. Liu, B.L. Gu and W. Duan: Appl. Phys. Lett. 91 (2007), 253122.

[7] V. Hung Nguyen, A. Bournel and P. Dollfus: J. Appl. Phys. 109 (2011), 093706.

[8] A. Rahman, J.W. Guikema and N. Markovic: http: /www. arxiv. org (2013) 13045531v1.

[9] B. Huang, Q. Yan, Z. Li and W. Duan: Front. Phys. China, 4 (2009), p.269.

[10] J. Chauhan and J. Guo: Nano Research 4 (2011) p.571.

[11] Y. -M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H. -Y. Chiu, A. Grill and Ph. Avouris: Science Vol. 327 (2011), p.662.

[12] F. Schwierz: Nat. Nanotechnol. 5 (2010) p.487.

[13] E. Suhendi, F.A. Noor, N. Kurniasih and Khairurrijal: Adv. Mater. Res. 896 (2014), p.367.

[14] W.Z. Shangguan, X. Zhou, S.B. Chiah, G.H. See and K. Chandrasekaran: J. Appl. Phys. 97 (2005) 123709.

[15] S.M. Sze: Semiconductor Devices, Physics and Technology (John Wiley & Sons, New Jersey 1981).

[16] M.I. Katsnelson, K.S. Novoselov and A.K. Geim: Nature Physics Vol. 2 (2006) p.620.

[17] S. Sutar, E. Comfort and J.U. Lee: Device Research Conference (DRC), 71st Annual (2013) p.149.

[18] V.V. Cheianov, V. Fal'ko and B.L. Altshuler: Science Vol. 315 (2007) 1252.