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Effect of Charge Transferring Materials on Photoluminescence Properties of CdSe/ZnS Quantum Dots

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Abstract:

The CdSe/ZnS core/shell quantum dots (QDs) were synthesized and characterized with absorption spectrometry, photoluminescence (PL) spectrometry and transmission electron microscopy. PL quenching of colloidal CdSe/ZnS QDs in the presence of charge transferring material was studied by means of steady-state and time-resolved PL spectroscopy. With increasing charge transferring materials concentration in the CdSe/ZnS QDs solution, the PL intensity and lifetime of CdSe/ZnS QDs decrease gradually. The quenching efficiency of CdSe/ZnS QDs decrease with increasing the oxidation potential of charge transferring materials. Based on the analysis, there are two pathways in the PL quenching process: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transfer from QDs to the charge transferring materials.

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Periodical:

Advanced Materials Research (Volume 981)

Pages:

879-882

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.981.879

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Online since:

July 2014

Authors:

Xuan Lin Chen, Yu Qiu Qu*, Gui Fan Li, Hong Wei, Liu Yang Zhang, Li Min An

Keywords:

Charge Transferring, Photoluminescence (PL), Quantum Dot (QD)

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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