Study on Simulation of Temperature Field and Optimization of Structure to Grounding Resistor

Da Jiang He; Peng Fei Shao; Hen Ling Yang; Jing Xiao; Jun Qu

doi:10.4028/www.scientific.net/AMR.986-987.1864

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987Study on Simulation of Temperature Field and...

Study on Simulation of Temperature Field and Optimization of Structure to Grounding Resistor

Abstract:

According to the structure of grounding resistor, the flow-current experiments of alloy materials which have different performance and specification have been done in the condition of simulation grounding fault. Based on the experiments, the simulation models of temperature field have been constructed; the distribution characteristics of the transient temperature field and the structure optimization of Grounding Resistor have been studied and discussed by the simulation models. The research results have a great engineering application value on the optimization of performance, the choice of the materials, the cost saving and the improvement of design efficiency to grounding resistor.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

1864-1868

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.1864

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Online since:

July 2014

Authors:

Da Jiang He*, Peng Fei Shao, Hen Ling Yang, Jing Xiao, Jun Qu

Keywords:

Grounding Resistor, Simulation, Structure Optimization, Temperature Field

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* - Corresponding Author

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