A Numerical Method for Ge-Profile of Microwave Power Device Based on Si/Si1-x/Si

Shao Hua Zhou; Qi Xiong; Jiang Ping Zeng

doi:10.4028/www.scientific.net/AMR.986-987.8

Paper Titles

Preface

Z-Transform Implementation of the CFS-PML for Truncating 3D Meta-Material FDTD Domains
p.3

A Numerical Method for Ge-Profile of Microwave Power Device Based on Si/Si_1-x/Si
p.8

Adsorption and Separation Research of CO₂/CH₄ on Modified Activated Carbon Fiber
p.13

Analyze the Effect of Thermal Conductivity of Cold Insulation Materials in Cryogenic Engineering
p.17

Application of Hall Effect in Semiconductor Material
p.21

Cloning and Analysis of MeCWINV6 Promoter from Biofuel Plant Cassava (Manihot esculenta Crantz)
p.25

Co-Cracking of Bio-Oil Model Compound Mixture and Ethanol with Different Blending Ratios for Bio-Gasoline Production
p.30

Composite Electrolyte Containing Binary Ionic Liquids and LiDFOB Additive on the Performance of Graphite Anode in Li-Ion Battery
p.34

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987A Numerical Method for Ge-Profile of Microwave...

A Numerical Method for Ge-Profile of Microwave Power Device Based on Si/Si_1-x/Si

Abstract:

A double-mesa hetero-junction bipolar structure of NPN type microwave power device is used. The Si is chosen for emitter and collector, and Si_1-_xGe_x alloy is for base. Based on some experiment data, a numerical method is used to get an equation about forbidden band E_g via the variety composition of Ge at 300K using MATLAB, which is more precise than linearization. We also calculate the collector current density J_C via the variety of V_BE and the obtained equation is consistent with the experiment result. An optimum Ge composition value was found. It has practical significance for the device design and simulation.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

8-12

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.8

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Online since:

July 2014

Authors:

Shao Hua Zhou, Qi Xiong*, Jiang Ping Zeng

Keywords:

Bipolar, Microwave-Power-Device, Numerical-Method, Si _l-xGe_x

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