Analysis the Influence Law of Process Parameters on the Deposition Rate of SiC Thin Film

Abstract:

Based on chemical vapor deposition (CVD) reaction and numerical analysis of the transmission process, analysis the influence law of the process parameters has been conducted for silicon carbide thin film. A detailed analysis on impact of the chamber pressure, substrate temperature and inlet flow has been realized through the use of CFD and chemical reactions software, coupling fluid flow, chemical reactions and mass transfer process in the deposition of SiC thin film. The result of simulation fully proved that the process parameters have different influence law, especially the chamber pressure.

• Periodical: Advanced Materials Research (Volume 988)
• Pages: 113-116
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.988.113
• Online since: July 2014
• Authors: Qi Ming Xiao*, Bin Xu, Jian Feng Xu
• Keywords: Deposition Rate, Influence Law, Process Parameter, SiC Thin Flim

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