Research of CoSiN Film as Diffusion Barrier in ULSI-Cu Metallization

Zai Yu Zhang; Ma Jia Wu; Xiu Hua Chen

doi:10.4028/www.scientific.net/AMR.988.130

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 988Research of CoSiN Film as Diffusion Barrier in...

Research of CoSiN Film as Diffusion Barrier in ULSI-Cu Metallization

Abstract:

CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO₂/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .

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Periodical:

Advanced Materials Research (Volume 988)

Pages:

130-133

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.988.130

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Online since:

July 2014

Authors:

Zai Yu Zhang*, Ma Jia Wu, Xiu Hua Chen

Keywords:

Barrier Layer, CoSiN, Cu, Magnetic Sputtering, Si, SiO₂

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