Simulation of CVD Diamond Film Growth by Method of Revised KMC

Li Zhu Zhang; Fu Zhong Wang

doi:10.4028/www.scientific.net/AMR.989-994.168

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 989-994Simulation of CVD Diamond Film Growth by Method of...

Simulation of CVD Diamond Film Growth by Method of Revised KMC

Abstract:

The growth of CVD diamond film was simulated by using revised KMC method. The simulation was conducted at CH₃ radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.01%-0.5%). The results showed that: The CVD diamond film growth under revised KMC method is superior, which is in good agreement with the experimental results. The concentration of CH₃ ([CH₃]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film.

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Periodical:

Advanced Materials Research (Volumes 989-994)

Pages:

168-171

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.989-994.168

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Online since:

July 2014

Authors:

Li Zhu Zhang*, Fu Zhong Wang

Keywords:

Chemical Vapor Deposition Diamond Film, Kinetic Monte Carlo Method, Simulation

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