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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 996Modeling of Stress and Strain Fields Induced...

Modeling of Stress and Strain Fields Induced during the Smart-Cut Process on Silicone - Influence of Different Couplings for Diffusion of Hydrogen at a Microscopic Scale

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Abstract:

The Smart-Cut technology consists in the increasing of pressure imposed by the diffusion of hydrogen ions in the silicon substrate leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions as well as the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare its results to experimental observations.

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Residual Stresses IX

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Periodical:

Advanced Materials Research (Volume 996)

Pages:

707-712

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.996.707

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Online since:

August 2014

Authors:

Yu Chen Zhao, Carl Labergère, Benoit Panicaud*, Jean Luc Grosseau-Poussard, Philippe Goudeau

Keywords:

Hydrogen Diffusion, Hydrogen Reaction, Mechanical Coupling, Nanosized Cavities, Numerical Modeling, Silicon Wafer, Van Der Waals Gas

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