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Determination of Residual Stress Fields in a Thermally Grown Oxide under Thermal Cycling Loadings, Using XRD and Raman Spectroscopy — Correlations with Microstructural States

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Abstract:

The presence of residual stresses in thermal oxide layers has been recognized for a long time. In the present work, the mechanical fields for chromia oxide are determined either by XRD or Raman spectroscopy. In addition, the microstructure of the chromia films is investigated ant its influence on the evolution of the stress release processes is analyzed.

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Periodical:

Advanced Materials Research (Volume 996)

Pages:

890-895

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.996.890

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Cite this paper

Online since:

August 2014

Authors:

Felaniaina Rakotovao*, Zhao Jun Tao, Jean Luc Grosseau-Poussard, Benoit Panicaud, Gilles Bonnet, Patrick Girault, Mathieu Guerain

Keywords:

Chromium Oxide, Creep Relaxation, High Temperature Oxidation, Raman Spectroscopy, Residual Stress, Stress Determination, Thermal Cycling, Thermal Strain, XRD

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