Electrical Resistivity, Thermopower and Magnetic Susceptibility of Nonstoichiometric BaVS3
Quasi-one-dimensional sulfide BaVS3 is known to show a metal-to-semiconductor transition at ~70 K. In this study we investigated the effects of nonstoichiometry of BaVS3 on this transition. Single phase samples were obtained in the composition ranges of 0.95 ≤ 1±x ≤ 1.05 in BaV1±xS3, and of 0.95 ≤ 1-x ≤ 1.00 in Ba1-xVS3. All single phase samples showed the metal-to-semiconductor transition at ~70 K. Seebeck measurements revealed that the dominant carriers are electrons in all samples. BaV1.05S3 and Ba0.98VS3 showed relatively large values of the power factor of about 1.0 x 10-4W/K2m around 200 K.
T. Ohtani et al., "Electrical Resistivity, Thermopower and Magnetic Susceptibility of Nonstoichiometric BaVS3", Advances in Science and Technology, Vol. 45, pp. 113-117, 2006