Magnetoresistance Effect of La0.8Bi0.2MnO3/MgO/Co Heterojunction Device

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Edited by:

P. VINCENZINI

Pages:

2566-2571

DOI:

10.4028/www.scientific.net/AST.45.2566

Citation:

T. Ogawa et al., "Magnetoresistance Effect of La0.8Bi0.2MnO3/MgO/Co Heterojunction Device", Advances in Science and Technology, Vol. 45, pp. 2566-2571, 2006

Online since:

October 2006

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