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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Magnetoresistance Effect of La0.8Bi0.2MnO3/MgO/Co...

Magnetoresistance Effect of La_0.8Bi_0.2MnO₃/MgO/Co Heterojunction Device

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11th International Ceramics Congress

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Periodical:

Advances in Science and Technology (Volume 45)

Pages:

2566-2571

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2566

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Online since:

October 2006

Authors:

Takashi Ogawa, Haruo Shindo, Hiromasa Takeuchi, Yoshiharu Koizumi

Keywords:

Heterojunction, Magnesium Oxide, Perovskite-Type Oxide, Tunnel Magnetoresistance

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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