Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics

Abstract:

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Tungsten oxide nanorods were prepared in a hot filament chemical vapor deposition (HFCVD) reactor. A mixture of gases containing hydrogen, oxygen or hydrogen and methane mixed with water vapor were passed into a quartz glass jar reactor and activated using a heated tungsten filament. The resulting deposits were characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman Spectroscopy. The deposit consisted of tungsten oxide nanorods (5 – 10 nm diameter and 50 – 75 nm long) and tungsten nanospheres with diameters of ~50nm. The tungsten oxide is then reduced to metallic tungsten by annealing in a hydrogen environment.

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Periodical:

Edited by:

P. VINCENZINI and E. CAPPELLI

Pages:

113-118

DOI:

10.4028/www.scientific.net/AST.48.113

Citation:

K. Sridharan et al., "Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics", Advances in Science and Technology, Vol. 48, pp. 113-118, 2006

Online since:

October 2006

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$35.00

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