Carbon nanotubes (CNTs) can be metallic or semiconductors depending simply on geometric characteristics. This peculiar electronic behavior, combined with high mechanical strength, make them potential building blocks of a new nano-electronic technology. High resolution images of CNTs often disclose structural deformations such as bent, twisted, or collapsed tubes. These deformations break the tube symmetry, and a change in their electronic properties should result. A computationally effective mixed finite element-tight-binding approach able to simulate the electromechanical behavior of single and multiwall nanotubes used in nano-electronic devices is presented. The finite element (FE) computes the evolution of atomic coordinates with deformation and provides these coordinates to a tight-binding (TB) code, enabling computation and updating of the electrical conductivity. The TB code is engineered to realize dramatic computational savings in calculating deformation-induced changes in electrical transport properties of the nanotubes.