Polysiloxane Coatings on Biomedical Micro Devices: Plasma Etching and Properties of Protection Layer

Dariusz Szmigiel; Krzysztof Domański; Piotr Grabiec

doi:10.4028/www.scientific.net/AST.57.220

Paper Titles

Energy Efficient Biomedical Signal Processing in Implantable Devices
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Implantable Electronics for the Recovery of Neuromuscular Functions
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Towards an Integrated, Fully-Implantable Vestibular Prosthesis for Balance Restoration
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Estimate Biocompatibility and Injection-Molding Processability of Ti-Based Metallic Glasses for Dental Implant
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Polysiloxane Coatings on Biomedical Micro Devices: Plasma Etching and Properties of Protection Layer
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Theory and Experiments for Mechanically-Induced Remodeling of Tissue Engineered Blood Vessels
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Fatigue Properties of Superelastic Ti-Ni Filaments Used in Braided Cables for Bone Fixation
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Design of a Progressively Expandable Stent Using Finite Elements
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Functional Materials for Wearable Sensing, Actuating and Energy Harvesting
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 57Polysiloxane Coatings on Biomedical Micro Devices:...

Polysiloxane Coatings on Biomedical Micro Devices: Plasma Etching and Properties of Protection Layer

Abstract:

We investigated the plasma etching of polysiloxane intended for use in cochlear implants as a protection layer. The processing was performed using fluorine-based chemistry ionized in RIE (Reactive Ion Etching) or ICP (Inductively Coupled Plasma) discharge. The effect of temperature on polysiloxane etch rate and the resulting surface morphology was examined. XPS was employed to determine chemical changes induced by plasma treatment. The cytotoxicity on a cell line was observed in order to estimate suitability of plasma processed silicone elastomer for use in biomedical applications. This paper presents the selected results, which reveals how the polysiloxane surface properties can change depending upon plasma treatment conditions. Exemplary micro devices encapsulated in plasma treated silicone elastomer are also shown.