Quantum Size Effects in a Si:H Films Prepared by PECVD with Different Hydrogen-Diluted Silane

Abstract:

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Quantum size effect (QSE) comprises a novel phenomenon where structural, mechanical, thermal, electronic and optical properties of solids are affected by the reduction in particle size. Size-dependent properties in semiconductors and dielectrics come into play especially by making one (thin films) or more (quantum wires and dots) dimensions of a sample very small, particularly going from micro to nano-dimensions. One or more dimensional QSE is accompanied with an increase of the light absorption and the blue-shift of the optical band-gap due to a creation or reduction of the crystallite sizes having different dielectric constants (relative permitivity). Understanding the nature of the size-induced properties is of fundamental importance for advanced technological applications. The size-dependent band-gap makes a material attractive for optical absorption-based applications. In this work, a-Si:H films different in thickness were prepared by PECVD technology using different hydrogen-diluted silane. One-dimensional QSE (when film thickness decreased) and three-dimensional QSE (when due to a high hydrogen-silane dilution the nano-crystalline structure of the films appeared) were observed.

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Periodical:

Edited by:

Pietro VINCENZINI, Kunihito KOUMOTO, Nicola ROMEO and Mark MEHOS

Pages:

137-142

DOI:

10.4028/www.scientific.net/AST.74.137

Citation:

L. Prušaková et al., "Quantum Size Effects in a Si:H Films Prepared by PECVD with Different Hydrogen-Diluted Silane", Advances in Science and Technology, Vol. 74, pp. 137-142, 2010

Online since:

October 2010

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$35.00

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