Doping Puzzles in II-VI and III-V Semiconductors
a.492
a.492
Defect Studies with Isotopically-Designed Semiconductors
a.493
a.493
Surface Recombination in Semiconductors
a.494
a.494
The Chemical Identification of Defect Impurities using Radioactive Isotopes
a.495
a.495
Multi-Phonon Carrier Emission and Capture by Defects in Nanostructures
a.496
a.496
Determination of High Deep-Level Concentrations in Transient Spectroscopy
a.497
a.497
Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
a.498
a.498
Linear Defects, Elasticity-Based Theory of Misfit-Induced Defects at Semiconductor Interfaces
a.499
a.499
Dynamic Treatment of the Splitting of Higher-Order Laue-Zone Lines, Induced by Dislocations in an Icosahedral Quasicrystal
a.500
a.500
Multi-Phonon Carrier Emission and Capture by Defects in Nanostructures
Page: A496