Multi-Phonon Carrier Emission and Capture by Defects in Nanostructures
a.496
a.496
Determination of High Deep-Level Concentrations in Transient Spectroscopy
a.497
a.497
Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
a.498
a.498
Linear Defects, Elasticity-Based Theory of Misfit-Induced Defects at Semiconductor Interfaces
a.499
a.499
Dynamic Treatment of the Splitting of Higher-Order Laue-Zone Lines, Induced by Dislocations in an Icosahedral Quasicrystal
a.500
a.500
Strain Relaxation in Lattice-Mismatched Hetero-Epitaxy
a.501
a.501
Model for the Distribution of Misfit Dislocations near to Epitaxial Layer Interfaces
a.502
a.502
Linear Motion of Crack-Tip Atoms during Dislocation Emission
a.503
a.503
Stability of Antiphase Boundary Dissociated <111> Screw Super-Dislocations in B2-Ordered Structures
a.504
a.504
Dynamic Treatment of the Splitting of Higher-Order Laue-Zone Lines, Induced by Dislocations in an Icosahedral Quasicrystal
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