Linear Defects, Elasticity-Based Theory of Misfit-Induced Defects at Semiconductor Interfaces
a.499
a.499
Dynamic Treatment of the Splitting of Higher-Order Laue-Zone Lines, Induced by Dislocations in an Icosahedral Quasicrystal
a.500
a.500
Strain Relaxation in Lattice-Mismatched Hetero-Epitaxy
a.501
a.501
Model for the Distribution of Misfit Dislocations near to Epitaxial Layer Interfaces
a.502
a.502
Linear Motion of Crack-Tip Atoms during Dislocation Emission
a.503
a.503
Stability of Antiphase Boundary Dissociated <111> Screw Super-Dislocations in B2-Ordered Structures
a.504
a.504
On the Core Energy of Dislocations
a.505
a.505
A Dislocation Density Approximation for the Flow-Stress versus Grain-Size Relationship of Polycrystals
a.506
a.506
Misfit Dislocations in Hetero-Epitaxial Growth, and Critical Thickness
a.507
a.507
Linear Motion of Crack-Tip Atoms during Dislocation Emission
Page: A503