Band Tailings and Deep Defects in Semiconductors: Application to α-Si:H and α-Ge:H

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Edited by:

A.A. Teate and N.C. Halder

Pages:

86-107

DOI:

10.4028/www.scientific.net/DDF.133.86

Citation:

A.A. Teate and N.C. Halder, "Band Tailings and Deep Defects in Semiconductors: Application to α-Si:H and α-Ge:H", Defect and Diffusion Forum, Vol. 133, pp. 86-107, 1996

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May 1996

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