The present textbook treats the effects of temperature upon weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder upon more complex systems such as GaAs and Al2Gal-xAs alloy. The effects of disorder-induced band tailing upon deep levels in compound semiconductor alloys are also studied.

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eBook:

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ToC:

Table of contents

Editors:

A.A. Teate and N.C. Halder

DOI:

https://doi.org/10.4028/b-Lmz3Jb

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Activation Energy, Band Tailings, Deep Defects, Hydrogenated Amorphous Germanium (a-Ge:H), Hydrogenated Amorphous Silicon, Semiconductors

Pages:

156

Year:

1996

ISBN-13 (softcover):

9783908450184

ISBN-13 (CD):

9783038599807

ISBN-13 (eBook):

9783035706642

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