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Abstracts
Grain Boundary Diffusion through Thin Films
a.506
Diffusion of Ions in a Layered Crystal
a.507
Competition of Helium and H with Regard to Migration Time
a.508
Atomistic Evaluation of Theories for Dopant Diffusion in Vacancy Gradients
a.509
An Asymptotic Analysis of the Kick-Out Diffusion Mechanism
a.510
Electromigration, Morphological Stability of a Heterophase under Electromigration Conditions
a.511
Point Defects, Point Defects in Semiconductors
a.512
Thermal Expansion and Schottky Disorder
a.513
Defects and Transport Properties of Metal Oxides
a.514
HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 134-135An Asymptotic Analysis of the Kick-Out Diffusion...

An Asymptotic Analysis of the Kick-Out Diffusion Mechanism

Page: A510

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