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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 162-163Comment on 'Dopant Migration Caused by Point...

Comment on 'Dopant Migration Caused by Point Defect Gradients' [P.Pichler, S. List: Solid State Phenomena, 32-33 (1993) 259]

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Defects and Diffusion in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 162-163)

Pages:

119-0

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.162-163.119

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Online since:

July 1998

Authors:

K. Maser

Keywords:

Defect-Dopant Interactions, Fick's Law, Non-Fickian Diffusion

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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