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IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 171-172IR Studies of Oxygen-Yacancy Related Defects in...

IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon

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Defects and Diffusion in Semiconductors II

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Periodical:

Defect and Diffusion Forum (Volumes 171-172)

Pages:

1-32

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.171-172.1

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Online since:

June 1999

Authors:

Charalamos A. Londos, L.G. Fytros, G.J. Georgiou

Keywords:

Infrared Spectroscopy, Irradiation, Localised Vibrational Modes, Oxygen Impurity

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Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

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