Abstracts

Si/SiO₂: Interface Defects
a.538

Si/SiO₂: Point Defects
a.539

SiC: H Diffusion and Ion Implantation
a.540

SiC: Electron Irradiation, Ion Implantation, Point Defects and Defect Annealing
a.541

SiC: Electron Irradiation and Point Defects
a.542

SiC: Electron Irradiation and Point Defects
a.543

SiC: Electron Irradiation, Point Defects, and Defect Annealing
a.544

SiC: Electron Irradiation, Point Defects and Defect Annealing
a.545

SiC: Ion Implantation and Point Defects
a.546

HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors IISiC: Electron Irradiation and Point Defects

SiC: Electron Irradiation and Point Defects

Page: A542