Si/SiO2: Interface Defects
a.534
a.534
Si/SiO2: Interface Defects
a.535
a.535
Si/SiO2: Interface Defects
a.536
a.536
Si/SiO2: Interface Defects
a.537
a.537
Si/SiO2: Interface Defects
a.538
a.538
Si/SiO2: Point Defects
a.539
a.539
SiC: H Diffusion and Ion Implantation
a.540
a.540
SiC: Electron Irradiation, Ion Implantation, Point Defects and Defect Annealing
a.541
a.541
SiC: Electron Irradiation and Point Defects
a.542
a.542
Si/SiO2: Interface Defects
Page: A538