SiC: Twins
a.117
a.117
SiC/GaN: Point Defects
a.118
a.118
SiC/Si: Au Diffusion, Dislocations and Stacking Faults
a.119
a.119
SiC/Si: Dislocations, Stacking Faults and Twins
a.120
a.120
SiGeC: B Diffusion, Ion Implantation and Point Defects
a.121
a.121
SiGeC: Point Defects
a.122
a.122
TiC: Dislocations
a.123
a.123
Ti3SiC2: Dislocations and Grain Boundaries
a.124
a.124
AlGaN, GaN: Mg Diffusion
a.125
a.125
SiGeC: B Diffusion, Ion Implantation and Point Defects
Page: A121