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Abstracts
SiC: Electron Irradiation, Point Defects and Defect Annealing
a.612
SiC: Ion Bombardment, Point Defects and Defect Annealing
a.613
SiC: Ion Bombardment, Point Defects and Defect Annealing
a.614
SiC: Ion Bombardment, Point Defects and Defect Annealing
a.615
SiC: Ion Implantation and Dislocations
a.616
SiC: Ion Implantation, Dislocations and Point Defects
a.617
SiC: Ion Implantation and Point Defects
a.618
SiC: Ion Implantation and Point Defects
a.619
SiC: Ion Implantation and Point Defects
a.620
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors IIISiC: Ion Implantation and Dislocations

SiC: Ion Implantation and Dislocations

Page: A616

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